IRF520FI SGS-THOMSON 100V 7A N-Channel Enhancement Mode Power MOS Transistor Data Sheet

Download PDF datasheet for SGS-Thomson Microelectronics IRF520FI 100V 7A N-Channel Enhancement Mode Power MOS Transistor (EN) 9 pages 1993 zip

SKU: IRF520FISGSTHOMSON100V10ADS1993 Category: Brand:

Description

This PDF data sheet is for the SGS-Thomson IRF520FI 100V 7A N-Channel Enhancement Mode Power MOS Transistor.

SGS-Thomson IRF520FI 100V 7A N-Channel Enhancement Mode Power MOS Transistor

* Typical R[DS](on) = 0.23 W
* Avalanche Rugged Technology
* 100% Avalanche Tested
* Repetitive Avalanche Data At 100 deg C
* Low Gate Charge
* High Current Capability
* 175 deg C Operating Temperature

APPLICATIONS
* High Current, High Speed Switching
* Solenoid And Relay Drivers
* Regulators
* DC-DC & DC-AC Converters
* Motor Control, Audio Amplifiers
* Automotive Environment (Injection, Abs, Air-Bag, Lampdrivers, Etc.)

(PDF) DATASHEET in English (EN) language.

CONTENTS:

INTERNAL SCHEMATIC DIAGRAM

IRF520FI PINOUT

ABSOLUTE MAXIMUM RATINGS
– Drain-source Voltage
– Drain-gate Voltage
– Gate-source Voltage
– Drain Current
– Insulation Withstand Voltage
– Max. Operating Junction Temperature

THERMAL DATA
– Thermal Resistance
– Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
Thermal Impedance for TO-220
Thermal Impedance for ISOWATT220
Derating Curve for TO-220
Derating Curve for ISOWATT220
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics

Unclamped Inductive Load Test Circuit
Unclamped Inductive Waveforms
Switching Time Test Circuit
Gate Charge Test Circuit

This datasheet provides all the information (according to the table of contents) from SGS-Thomson about the IRF520FI 100V 7A N-Channel Enhancement Mode Power MOS Transistor. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.

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