IRF520 SGS-THOMSON 100V 10A N-Channel Enhancement Mode Power MOS Transistor Data Sheet

Download Datasheet for SGS-Thomson Microelectronics IRF520 100V 10A N-Channel Enhancement Mode Power MOS Transistor [9 pages 1993 pdf/zip]

SKU: IRF520SGSTHOMSON100V10ADS1993 Category: Brand:

Description

* Typical R[DS](on) = 0.23 W
* Avalanche Rugged Technology
* 100% Avalanche Tested
* Repetitive Avalanche Data At 100 deg C
* Low Gate Charge
* High Current Capability
* 175 deg C Operating Temperature

APPLICATIONS
* High Current, High Speed Switching
* Solenoid And Relay Drivers
* Regulators
* DC-DC & DC-AC Converters
* Motor Control, Audio Amplifiers
* Automotive Environment (Injection, Abs, Air-Bag, Lampdrivers, Etc.)

INTERNAL SCHEMATIC DIAGRAM

IRF520 PINOUT

ABSOLUTE MAXIMUM RATINGS
– Drain-source Voltage
– Drain-gate Voltage
– Gate-source Voltage
– Drain Current
– Insulation Withstand Voltage
– Max. Operating Junction Temperature

THERMAL DATA
– Thermal Resistance
– Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
Thermal Impedance for TO-220
Thermal Impedance for ISOWATT220
Derating Curve for TO-220
Derating Curve for ISOWATT220
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics

Unclamped Inductive Load Test Circuit
Unclamped Inductive Waveforms
Switching Time Test Circuit
Gate Charge Test Circuit