STN8205A Stanson 5A Dual N Channel MOSFET Data Sheet
Download Datasheet for Stanson Technology STN8205A 5.0A Dual N Channel Enhancement Mode MOSFET [7 pages v1 2007 pdf/zip]
Description
STN8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
DATASHEET CONTAINS:
PIN CONFIGURATION (PINOUT)
FEATURES
ABSOULTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
– Static
– Dynamic
TYPICAL CHARACTERICTICS
PACKAGE OUTLINE
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