RD100HHF1 Mitsubishi Electric RF Power MOSFET Data Sheet
Download Datasheet for Mitsubishi Electric RD100HHF1 100W @ 30MHz Silicon MOSFET Power Transistor [7 pages Rev.1 2003 pdf/zip]
Description
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES:
– High power and High Gain:
Pout>100W, Gp>11.5dB @ Vdd=12.5V, f=30MHz
– High Efficiency: 60% typ. on HF Band
APPLICATION:
For output stage of high power amplifiers in HF Band mobile radio sets.
DATASHEET CONTAINS:
– ABSOLUTE MAXIMUM RATINGS
– RD100HHF1 PINOUT
– ELECTRICAL CHARACTERISTICS
– TYPICAL CHARACTERISTICS
– TEST CIRCUIT
– INPUT/OUTPUT IMPEDANCE vs. FREQUENCY CHARACTERISTICS
– RD100HHF1 S-PARAMETER DATA
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