RD100HHF1 Mitsubishi Electric RF Power MOSFET Data Sheet
Download PDF datasheet for Mitsubishi Electric RD100HHF1 (100W @ 30MHz) Silicon MOSFET Power Transistor (EN) 7 pages Rev.1 2003 zip
Description
This PDF data sheet is for the Mitsubishi RD100HHF1 Silicon MOSFET Power Transistor.
Mitsubishi Electric RD100HHF1 100W @ 30MHz Silicon MOSFET Power Transistor
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES:
– High power and High Gain:
Pout>100W, Gp>11.5dB @ Vdd=12.5V, f=30MHz
– High Efficiency: 60% typ. on HF Band
APPLICATION:
For output stage of high power amplifiers in HF Band mobile radio sets.
(PDF) DATASHEET in English (EN) language.
CONTENTS:
– ABSOLUTE MAXIMUM RATINGS
– RD100HHF1 PINOUT
– ELECTRICAL CHARACTERISTICS
– TYPICAL CHARACTERISTICS
– TEST CIRCUIT
– INPUT/OUTPUT IMPEDANCE vs. FREQUENCY CHARACTERISTICS
– RD100HHF1 S-PARAMETER DATA
This data sheet provides all the information (according to the table of contents) from Mitsubishi about the RD100HHF1 Silicon MOSFET Power Transistor. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.
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