BF966 Philips Transistor Data Sheet
Download PDF datasheet for Philips Semiconductors BF966 Silicon N-channel Dual Gate MOS-FET (EN) Data Handbook S5: Field-effect transistors 9398 132 7D011 1985 zip
Description
This PDF datasheet is for the Philips BF966 MOS-FET.
About the Item
Philips Semiconductors BF966 Silicon N-channel Dual Gate MOS-FET
Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for u.h.f. applications in television tuners and professional communication equipment.
This MOS-FET tetrode is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
Page 206 (197) of Philips Semiconductors Data Handbook S5 (Field-effect transistors) 1985
Document(s) available
(PDF) DATASHEET
Available languages
ENGLISH (EN)
SUMMARY OF CONTENTS
– Quick reference data
– Mechanical data
– Ratings
– Thermal resistance
– Characteristics
Why download the Datasheet?
This datasheet provides all the information from PHILIPS SEMICONDUCTORS about the BF966 MOS-FET, as detailed in the table of contents. Reading it completely will address most questions you might have. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.
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