IRFZ44N Philips 55V 49A N-Channel Enhancement Mode TrenchMOS Transistor Data Sheet
Download Datasheet for Philips Semiconductors IRFZ44N 55V 49A N-channel Enhancement Mode TrenchMOS Transistor [8 pages Rev 1.000 1999 pdf/zip]
Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ‘trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.
IRFZ44N PINOUT
PIN CONFIGURATION
INTERNAL SCHEMATIC DIAGRAM
LIMITING VALUES
– Drain-source voltage
– Drain-gate voltage
– Gate-source voltage
– Drain current
– Total power dissipation
ESD LIMITING VALUE
THERMAL RESISTANCES
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
AVALANCHE LIMITING VALUE
Fig.1. Normalised power dissipation.
Fig.2. Normalised continuous drain current.
Fig.3. Safe operating area.
Fig.4. Transient thermal impedance.
Fig.5. Typical output characteristics.
Fig.6. Typical on-state resistance.
Fig.7. Typical transfer characteristics.
Fig.8. Typical transconductance.
Fig.9. Normalised drain-source on-state resistance.
Fig.10. Gate threshold voltage.
Fig.11. Sub-threshold drain current.
Fig.12. Typical capacitances.
Fig.13. Typical turn-on gate-charge characteristics.
Fig.14. Typical reverse diode current.
Fig.15. Normalised avalanche energy rating.
Fig.16. Avalanche energy test circuit.
Fig.17. Switching test circuit.
MECHANICAL DATA
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