IRF540N International Rectifier 100V 33A Power MOSFET Data Sheet

Description

BRIEF DESCRIPTION
– Advanced Process Technology
– Ultra Low On-Resistance
– Dynamic dv/dt Rating
– 175 deg C Operating Temperature
– Fast Switching
– Fully Avalanche Rated

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

CONTENTS:
– Absolute Maximum Ratings
– Internal Schematic Diagram
– IRF540N pinout
– Thermal Resistance
– Electrical Characteristics
– Source-Drain Ratings and Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
– Peak Diode Recovery dv/dt Test Circuit
Fig 14. For N-channel HEXFET power MOSFETs
– Package Outline

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