IRF3205 International Rectifier HEXFET Power MOS Field Effect Transistor Data Sheet
Download Datasheet for International Rectifier IRF3205 HEXFET Power MOS Transistor [9 pages PD-91279E 2001 pdf/zip]
Description
* Advanced Process Technology
* Ultra Low On-Resistance
* Dynamic dv/dt Rating
* 175 deg C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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