FS8205A FuxinSemi 6-pin Dual N-Channel MOSFET Data Sheet

Description

This PDF data sheet is for the FuxinSemi FS8205A Dual N-Channel Enhancement Mode MOSFET.

FuxinSemi FS8205A 6-pin Dual N-Channel Enhancement Mode MOSFET in SOT-23-6L

FEATURE
– Advanced trench process technology
– High density cell design for ultra low on-resistance

APPLICATION
– Battery protection
– Switching application

(PDF) DATASHEET in English (EN) language.

CONTENTS:

PACKAGE

MARKING

CIRCUIT DIAGRAM

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS
– Static Characteristics
– Dynamic characteristics
– Source-Drain Diode characteristics

TYPICAL CHARACTERISTICS
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance

SOT-23-6L Package Information

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