BF961 Siemens Dual Gate N-channel MOS field effect transistor Data Sheet
Download Datasheet for Siemens BF961 Dual Gate N-channel MOS field effect transistor [12 pages pdf/zip]
BF 961 is an ion-implanted dual gate N-channel MOS field effect transistor of the depletion type with integrated gate-protection diodes in a plastic package similar to TO 120, (50 B4 DIN 41 867). The source terminal is internally connected with the substrate.
The tetrode is especially suitable for use in TV UHF input stages and mixers.