BF960 Telefunken Dual Gate N-channel MOS field effect transistor Data Sheet
Download PDF datasheet for Telefunken BF960 Dual Gate N-channel MOS field effect transistor (EN) 10 pages zip
Description
This PDF data sheet is for the Telefunken BF960 Dual Gate N-channel MOS field effect transistor.
Telefunken Electronic BF960 Dual Gate N-channel MOS field effect transistor
Applications: Input- and Mixerstages especially for UHF TV-tuners up to 900 MHz
FEATURES:
– Integrated Gate protection diodes
– High cross modulation performance
– Low noise figure
– High AGC-range
– Low feedback capacitance
– Low input capacitance
(PDF) DATASHEET in English (EN) language.
CONTENTS:
MAXIMUM RATINGS
– Drain-source voltage
– Drain current
– Gate-source peak current
– Storage temperature range
– Channel temperature
– Total power dissipation
THERMAL RESISTANCE
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
TEST CIRCUIT FOR POWER GAIN AND NOISE FIGURE
TEST CIRCUIT FOR POWER GAIN, NOISE FIGURE, AND CROSS MODULATION
TEST CIRCUIT FOR MIXER GAIN
This data sheet provides all the information (according to the table of contents) from Telefunken Electronic about the BF960 Dual Gate N-channel MOS field effect transistor. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.
Download it by clicking the button below
Helped you out?
Glad to hear that. It would be awesome if you could . . .
