BF960 Siemens Dual Gate N-channel MOS field effect transistor Data Sheet

Download PDF datasheet for Siemens BF960 Dual Gate N-channel MOS field effect transistor (EN) 12 pages zip

SKU: SIEMENSBF960DS19XX Category: Brand:

Description

This PDF datasheet is for the Siemens BF960 Dual Gate N-channel MOS field effect transistor.

Siemens BF960 Dual Gate N-channel MOS field effect transistor

BF 960 is an ion-implanted dual gate N-channel MOS field effect transistor of the depletion type with integrated gate-protection diodes in a plastic package similar to TO 120, (50 B4 DIN 41 867). The source lead is internally connected with the substrate.
The BR 860 tetrode is particularly suitable for use in TV UHF input stages and mixers as well as for universal applications throughout the frequency range between 200 MHz and 1 GHz.

(PDF) DATASHEET (ENGLISH)

CONTENTS

MAXIMUM RATINGS
– Drain-source voltage
– Drain current
– Gate-source peak current
– Storage temperature range
– Channel temperature
– Total power dissipation

THERMAL RESISTANCE

STATIC CHARACTERISTICS

DYNAMIC CHARACTERISTICS

TEST CIRCUIT FOR POWER GAIN AND NOISE FIGURE

TEST CIRCUIT FOR POWER GAIN, NOISE FIGURE, AND CROSS MODULATION

TEST CIRCUIT FOR MIXER GAIN

Why download the Datasheet?

This datasheet provides all the information from Siemens about the BF960 transistor, as detailed in the table of contents. Reading it completely will address most questions you might have. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.

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