BF960 Siemens Dual Gate N-channel MOS field effect transistor Data Sheet
Download Datasheet for Siemens BF960 Dual Gate N-channel MOS field effect transistor [12 pages pdf/zip]
Description
BF 960 is an ion-implanted dual gate N-channel MOS field effect transistor of the depletion type with integrated gate-protection diodes in a plastic package similar to TO 120, (50 B4 DIN 41 867). The source lead is internally connected with the substrate.
The BR 860 tetrode is particularly suitable for use in TV UHF input stages and mixers as well as for universal applications throughout the frequency range between 200 MHz and 1 GHz.