AS12C Advanced Semiconductor Step Recovery Diode Data Sheet

Description

This datasheet is for AS12C Step Recovery Diode (SRD) and contain technical specifications for this semiconductor.

Advanced Semiconductor (ASI) AS12C Step Recovery Diode SRD

Step Recovery Diodes have relatively little capacitance change under reverse bias and are used for higher efficiency applications. These diodes do not require idler circuits to enhance efficiency. The use of these diodes results in:
– High Efficiency
– High and Low Order Multiplication
– Narrow Bandwidth
– Comb Generation

(PDF) DATASHEET in English (EN) language.

CONTENTS:

– Absolute maximum ratings
– Junction capacitance
– Breakdown voltage
– Selection of Bias resistor
– Tansition time
– Minority carrier lifetime
– Thermal resistance

The datasheet for this step recovery diode is useful to RF designers and engineers, researchers, technicians, and hobbyists dealing with high-frequency circuits and microwave applications.

This datasheet provides all the information (according to the table of contents) from ASI (Advanced Semiconductor) about the AS12C Step Recovery Diode. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.

Download it by clicking the button below

Download file

Helped you out?
Glad to hear that. It would be awesome if you could . . .