2SC2290 Toshiba Silicon NPN Epitaxial Planar Type Transistor Data Sheet
Download PDF datasheet for Toshiba 2SC2290 Silicon NPN Epitaxial Planar Type Transistor (EN) 2 pages 961001EAA2 1997 zip
Description
This PDF data sheet is for the Toshiba 2SC2290 Transistor.
About the Item
Toshiba 2SC2290 Silicon NPN Epitaxial Planar Type Transistor
2~30MHz SSB Linear Power Amplifier Applications. (Low Supply Voltage Use)
– Specified 12.5V, 28MHz Characteristics
– Output Power: Po = 60W PEP
– Power Gain: Gp = 11.8dB (Min.)
– Collector Efficiency: n=35% (Min.)
– Intermodulation Distortion: IMD=-30dB (Max.)
(PDF) DATA SHEET (ENGLISH)
SUMMARY OF CONTENTS
MAXIMUM RATINGS
– Collector-Base Voltage
– Collector-Emitter Voltage
– Emitter-Base Voltage
– Collector Current
– Collector Power Dissipation
– Junction Temperature
– Storage Temperature Range
ELECTRICAL CHARACTERISTICS
– Collector-Emitter Breakdown Voltage
– Emitter-Base Breakdown Voltage
– DC Current Gain
– Collector Output Capacitance
– Power Gain
– Input Power
– Collector Efficiency
– Intermodulation Distortion
– Series Equivalent Input Impedance
– Series Equivalent Output Impedance
Fig. Pi Test Circuit
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