2SC2290 Toshiba Silicon NPN Epitaxial Planar Type Transistor Data Sheet

Description

This PDF data sheet is for the Toshiba 2SC2290 Transistor.

Toshiba 2SC2290 Silicon NPN Epitaxial Planar Type Transistor

2~30MHz SSB Linear Power Amplifier Applications. (Low Supply Voltage Use)
– Specified 12.5V, 28MHz Characteristics
– Output Power: Po = 60W PEP
– Power Gain: Gp = 11.8dB (Min.)
– Collector Efficiency: n=35% (Min.)
– Intermodulation Distortion: IMD=-30dB (Max.)

(PDF) DATA SHEET in English (EN) language.

CONTENTS:

MAXIMUM RATINGS
– Collector-Base Voltage
– Collector-Emitter Voltage
– Emitter-Base Voltage
– Collector Current
– Collector Power Dissipation
– Junction Temperature
– Storage Temperature Range

ELECTRICAL CHARACTERISTICS
– Collector-Emitter Breakdown Voltage
– Emitter-Base Breakdown Voltage
– DC Current Gain
– Collector Output Capacitance
– Power Gain
– Input Power
– Collector Efficiency
– Intermodulation Distortion
– Series Equivalent Input Impedance
– Series Equivalent Output Impedance

Fig. Pi Test Circuit

This data sheet provides all the information (according to the table of contents) from Toshiba about the 2SC2290 Silicon NPN Epitaxial Planar Type Transistor. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.

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