2SC2290 Toshiba Silicon NPN Epitaxial Planar Type Transistor Data Sheet

Description

2~30MHz SSB Linear Power Amplifier Applications.
(Low Supply Voltage Use)

– Specified 12.5V, 28MHz Characteristics
– Output Power: Po = 60W PEP
– Power Gain: Gp = 11.8dB (Min.)
– Collector Efficiency: n=35% (Min.)
– Intermodulation Distortion: IMD=-30dB (Max.)

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