1N4446 Philips Semiconductors High-Speed Diode Data Sheet
Download Datasheet for Philips Semiconductors 1N4446 High-Speed Diode [7 pages 1996 pdf/zip]
The 1N4446 is a high-speed switching diode fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
– Hermetically sealed leaded glass SOD27 (DO-35) package
– High switching speed: max. 4 ns
– General application
– Continuous reverse voltage: max. 75 V
– Repetitive peak reverse voltage: max. 75 V
– Repetitive peak forward current: max. 450 mA
– Forward voltage: max. 1 V.
– High-speed switching.
In accordance with the Absolute Maximum Rating System (IEC 134).
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3 Forward current as a function of forward voltage.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Fig.5 Reverse current as a function of junction temperature.
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
Fig.7 Reverse recovery voltage test circuit and waveforms.
Fig.8 Forward recovery voltage test circuit and waveforms.
Fig.9 SOD27 (DO-35).